Working mechanism and performances of FE-FET based on 2D In2Se3 films. (IMAGE)
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a,b, Schematic of the FE-FET device and the corresponding band diagrams with the P-down (a) and P-up (b) state. c–e, Hysteresis transfer characteristic loops of β-, β′- and α-In2Se3 devices during double sweeping with various Vds values. The inset in c shows the optical image of a typical In2Se3 FET device. Scale bar, 20 μm. f, Hysteresis windows plotted with various gate-voltage sweep ranges of β-, β′- and α-In2Se3 devices. g, Field-effect mobility and on/off current ratio of various β- and β′-In2Se3 devices. h, Mobility and on/off current ratio of various α-In2Se3 devices. i, Retention testing of α-In2Se3 NVM device by gate-voltage control. j, Robust endurance of the α-In2Se3 device after 10,000 write/erase cycles, without the degradation of HRS and LRS. k, Retention measurement on the β′-In2Se3 NVM device.
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