Phase-controlled synthesis of large-area 2D In2Se3 films. (IMAGE)
Caption
a, Schematic of the controlled synthesis of β-, β′- and α-In2Se3 films. The β and β′ phases were directly grown by CVD and the α phase was obtained by phase transition after transferring the β′ phase to non-flat surfaces. The pink balls represent the gaseous Se precursor, and the blue balls represent the gaseous In-containing precursor (In2O3–xSex and/or InSe1+y). b, Photograph of the obtained large-area In2Se3 films of three phases (β and β′ on mica and α on PET). c, Side-view crystal models simulated by DFT calculations on α-, β- and β′-In2Se3. The red balls represent Se atoms, and the blue balls represent In atoms. The blue arrows highlight the main polarization directions. d, Growth-time-dependent optical images of β-In2Se3 films at 5, 20 and 30 min (top). Scale bars, 50 μm. Schematic of the growth mechanism of continuous β-In2Se3 films (bottom). It includes three stages: (1) nucleation, (2) growth and merging and (3) stitching. e, Raman spectra of 2D In2Se3 films of the three phases. f–h, Atomic ADF-STEM images of β-In2Se3 (f), β′-In2Se3 (g) and α-In2Se3 (h). The insets show the simulated ADF-STEM images of the corresponding phases. Scale bars, 1 nm.
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