The change of microstructure and related electrical transmission properties during thermal deformation (IMAGE)
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EBSD microstructures of textured Cu0.01Bi2Te2.7Se0.3. (a), (b) and (c) represent IPF mapping images of Tex-0⊥, Tex-1⊥, and Tex-2⊥ sample, respectively. (d) A schematic diagram of the micro-morphology of the sample during hot deformation process. With increasing the number of texturation, the grain size of material becomes larger and the grain orientation has been aligned, which effectively reduces the carrier and phonon scattering. (e) The temperature dependence of electrical conductivity for different textured Cu0.01Bi2Te2.7Se0.3 sample. (f) The room temperature carrier concentration and carrier mobility. The temperature dependence of (g) Seebeck coefficient, and (h) power factor.
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