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Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and...(8 of 8)

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American Association for the Advancement of Science (AAAS)

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and...(8 of 8)

video: Electrical probes are positioned over the chip containing the carbon nanotube devices and a microscope is used to precisely align and place the probes on the field-effect transistor electrodes. This material relates to a paper that appeared in the Sept. 2, 2016, issue of Science Advances, published by AAAS. The paper, by G.J. Brady at University of Wisconsin-Madison in Madison, WI, and colleagues was titled, 'Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs.' view more 

Credit: Courtesy of Jerry Brady and Mike Arnold


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