Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and...(8 of 8) (VIDEO)

American Association for the Advancement of Science (AAAS)

Caption

Electrical probes are positioned over the chip containing the carbon nanotube devices and a microscope is used to precisely align and place the probes on the field-effect transistor electrodes. This material relates to a paper that appeared in the Sept. 2, 2016, issue of Science Advances, published by AAAS. The paper, by G.J. Brady at University of Wisconsin-Madison in Madison, WI, and colleagues was titled, 'Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs.'

Credit

Courtesy of Jerry Brady and Mike Arnold

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