Fig. 2: Device performance of OSCs with DIO and TCB processing. (IMAGE)

The Hong Kong Polytechnic University

Fig. 2: Device performance of OSCs with DIO and TCB processing.

Caption

a Device structure used in this work. b J–V curves for PM6: Y6-based OSCs with benchmark solvent additive DIO and with TCB. c EQE spectra for PM6:Y6-based OSCs with DIO and with TCB. d PCE histograms of PM6:Y6-based OSCs with DIO and with TCB. e EQEEL of PM6:Y6 devices with different treatments at various injected current densities. f Detailed energy loss in the DIO processed and TCB processed PM6:Y6 devices. Source data are provided as a Source Data file.

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© 2023 Research and Innovation Office, The Hong Kong Polytechnic University

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