Reduced Stress in Films Created with Synchronized Pulsed Substrate Bias (IMAGE)

Tokyo Metropolitan University

Reduced Stress in Films Created with Synchronized Pulsed Substrate Bias

Caption

Measurements of film stress and lattice properties for films created without a bias (floating), with a continuous bias of 50V, with synchronized pulsed substrate biases (50V, 100V, 200V) using argon as the sputtering gas, and with a synchronized pulsed substrate bias of 50V using krypton as the sputtering gas. FWHM (Full Width at Half Maximum) is a measure of how well ordered the atoms in the films are (the lower the FWHM, the more ordered it is); the lattice parameter is the size of the repeating cells of the crystalline film, with a limit given by the hypothetical "perfectly relaxed" or unstrained crystal.

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Tokyo Metropolitan University

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