Image Showing Interface Layer (IMAGE) Georgia Institute of Technology Caption Cross-section bright-field high-resolution STEM images of GaN-diamond interfaces bonded by surface activated bonding technique. Credit Zhe Cheng, Georgia Tech Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.