The Si-compatible 4-inch device array with high-k gate dielectric. (IMAGE)
Caption
(a) Electrical characteristics comparison of FETs based on SiO2 (black, @VD = 120 V) and high-k Ta2O5/pristine Ga2O3 dielectric (red, @VD = 12 V). (b) Transfer characteristics of the high-k FET depicted in (a). (c) Photograph of the fabricated 4-inch device array during data measurement. The inset in (c) shows the FET structure within the 4-inch array. (d) Transfer curves of 350 randomly measured FETs in the 4-inch array. The inset in (d) shows an overview of the 4-inch device array.
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