Dielectric properties of CL-v family and FET device using CL-v phases as dielectric layer. (IMAGE)

The Hong Kong Polytechnic University

Dielectric properties of CL-v family and FET device using CL-v phases as dielectric layer.

Caption

(A) Tauc plot of the CL-v perovskites. (B) The dielectric constant of the CL-v perovskites displayed from 1 kHz to 1 MHz. (C) Dielectric constant and band gap values of the CL-v perovskites versus other dielectric materials. (D) Optical microscope image of FET using 100 nm CMD-N-P2 as a dielectric layer. The transfer curve (E) and output curve (F) of FET with BMD-N-P2 as a dielectric layer. Subthreshold swing is 158 mV per decade (dec−1).

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© 2024 Research and Innovation Office, The Hong Kong Polytechnic University. All Rights Reserved.

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