Novel design perovskite electrochemical cell for light-emission and light-detection

A new publication from Opto-Electronic Advances, 10.29026/oea.2023.220154  discusses novel design perovskite electrochemical cell for light-emission and light-detection.

Although halide perovskite light-emitting devices exhibit exceptional properties such as high efficiency, high color purity, and broad color gamut, their industrial integration generally suffers from the technological complexity of devices' multilayer structure alongside in-operation induced heating poor stability. Halide perovskite light-emitting electrochemical cells are a novel type of perovskite optoelectronic device that differs from the perovskite light-emitting diodes by a simple monolayered architecture. The reported in the paper perovskite light-emitting electrochemical cell consists of a silicon substrate, multifunctional single composite perovskite layer (a mixture of halide perovskite microcrystals, polymer support matrix, and added mobile ions), and transparent single-walled carbon nanotube film top contact. Due to silicon's good thermal conductivity, the device endures 40% lower thermal heating during operation compared to conventional ITO/glass substrate. Moreover, when a positive bias is applied to the device it yields a luminance of more than 7000 cd/m2 at 523 nm (green color). When a negative bias is applied to the device it operates as a photodetector with a sensitivity up to 0.75 A/W (for wavelength in blue or UV regions), specific detectivity of 8.56∙1011 Jones, and linear dynamic range of 48 dB. The technological potential of such a device is proven by the demonstration of a 24-pixel indicator display as well as successful device miniaturization by the creation of electroluminescent images with the smallest features less than 50 μm.

The perovskite light-emitting electrochemical cells are a viable alternative to the conventional perovskite material devise research light-emitting diodes. Not only do perovskite light-emitting electrochemical cells imply having a much simpler architecture and design with one single functional layer replacing multiple active, charge-separation and transport layers of perovskite light-emitting diodes, but also perovskite light-emitting electrochemical cells can possess all extraordinary properties of LEDs, such as high efficiency, high color purity, and broad color gamut. The reason why perovskite light-emitting electrochemical cells are capable of doing that – is completely different from the LEDs operation principle: when electrical bias is applied to the device, mobile positive and negative ions inside of the perovskite layer migrate towards corresponding electrodes dynamically forming a p-i-n structure inside of the perovskite layer, which allows effective electron-hole recombination with photon emission! Comprehensive research on various back-ups to conventional LED technology is a valuable source of diversifying the pool of industrial opportunities.

The reported device demonstrates exceptional light-emitting and light-detecting (“dual-functionality”) characteristics alongside an enhanced in-operation heating durability. This is possible due to the utilization of silicon substrate in the perovskite light-emitting electrochemical cells design. Silicon material is one of the stepping stones of the CMOS technology - complementary metal–oxide–semiconductor technology – technology used in manufacturing of all semiconductor chips, displays, etc. Integration of such an emerging material like perovskite material with silicon brings the R&D community one step closer to obtaining an industrial perovskite light-emitting electrochemical cell.

Last but not least, the broader context benefit of the reported device design – is its ITO-free transparent electrode based on single-walled carbon nanotubes. ITO - Indium-Tin Oxide- is a transparent conductive material widely used in perovskite photovoltaics and optoelectronics. Indium is a depleting element and, thus, the replacement of ITO by other materials based on earth-abundant elements would aid to prevail the indium deficiency in the industry. 

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The project at hand results from a flourishing collaboration between Alferov University and ITMO University, both located in St.Petersburg (Russia). The purpose of the research group of Prof. Ivan Mukhin (Renewable Energy Sources Laboratory) from Alferov University is to extend the horizons of conventional semiconductors (Si and III-V group semiconductors) electronics and optoelectronics with innovative device designs (flexible and stretchable electronics) and with original ideas in material synthesis and manufacturing (taking advantage of low-dimensional structures such as semiconductor nanowires). The research group of Prof. Sergey Makarov (Laboratory of Hybrid Nanophotonics and Optoelectronics) from ITMO University not only focuses on fundamental research in the field of halide perovskite photonics and non-linear optics but also puts an enormous effort into the development of photovoltaic and optoelectronic perovskite devices, improvement of their stability and their industrial integration.

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Opto-Electronic Advances (OEA) is a high-impact, open access, peer reviewed monthly SCI journal with an impact factor of 8.933 (Journal Citation Reports for IF2021). Since its launch in March 2018, OEA has been indexed in SCI, EI, DOAJ, Scopus, CA and ICI databases over the time and expanded its Editorial Board to 36 members from 17 countries and regions (average h-index 49).

The journal is published by The Institute of Optics and Electronics, Chinese Academy of Sciences, aiming at providing a platform for researchers, academicians, professionals, practitioners, and students to impart and share knowledge in the form of high quality empirical and theoretical research papers covering the topics of optics, photonics and optoelectronics.

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Baeva M, Gets D, Polushkin A, Vorobyov A, Goltaev A et al. ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection. Opto-Electron Adv 6, 220154 (2023). doi: 10.29026/oea.2023.220154 

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