image: This is a scanning electron micrograph in perspective view of 8-micrometer-tall, faceted Ge crystals grown epitaxially on Si pillars. The array was obtained under conditions of self-limited lateral expansion, leaving a small gap between neighboring crystals. This image relates to a paper that appeared in the March 16, 2012, issue of Science, published by AAAS. The paper, by C.V. Falub at Eidgenoessische Technische Hochschule Zurich (ETH Zurich) in Zurich, Switzerland, and colleagues was titled, "Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals." view more
Credit: Image © <i>Science</i>/AAAS