image: This is a scanning electron micrograph in perspective view of an array of 8-micrometer-tall Ge crystals grown epitaxially on Si pillars. The array was obtained under conditions of self-limited lateral expansion of the crystals, thus preventing the latter to fuse and form a continuous film. Part of the array was broken during sample processing, and the damage can be seen in the foreground of the image. This image relates to a paper that appeared in the March 16, 2012, issue of Science, published by AAAS. The paper, by C.V. Falub at Eidgenoessische Technische Hochschule Zurich (ETH Zurich) in Zurich, Switzerland, and colleagues was titled, "Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals." view more
Credit: Image © <i>Science</i>/AAAS