Unlocking the potential of terahertz radiation with N-Polar AlGaN/GaN HEMTs

Terahertz (THz) technology has long promised transformative applications in fields ranging from ultrafast communications to medical diagnostics. A research team led by Runxian Xing et al. has achieved a significant breakthrough by leveraging N-polar AlGaN/GaN HEMTs to generate high-power THz radiation through plasma wave instability. This work addresses key challenges in THz device efficiency and power output.

By combining Maxwell’s equations with a self-consistent hydrodynamic model, the team simulated the complex plasma dynamics in N-polar AlGaN/GaN HEMTs. The results revealed that structural advantages of N-polar GaN, such as enhanced electron confinement and lower contact resistance, enable higher radiation power and operating frequencies compared to conventional Ga-polar devices. Under optimal conditions, the team calculated a radiation power of up to several milliwatts—a remarkable improvement over previous approaches.

This study not only advances the understanding of Dyakonov–Shur instability in HEMTs but also lays the groundwork for compact, high-efficiency THz sources. Such innovations could enable on-chip integration of THz systems for real-world applications, including high-speed wireless communication and non-destructive testing. The work entitled “Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries” was published on Frontiers of Optoelectronics (published on Mar. 14, 2025).

DOI: 10.1007/s12200-025-00148-4