Researchers unveils proximity-induced electrical transport properties of Pt/CrI3 heterostructure

Recently, associate researcher HAN Yuyan, from the High Magnetic Field Laboratory, Hefei Institutes of Physical Science of the Chinese Academy of Sciences, collaborated with Prof. KANG Chaoyang and WANG Kai from Henan University to systematically investigated the electrical transport properties of Pt/CrI₃ heterostructure.

It has been published in Applied Surface Science.

As science progresses, two-dimensional magnetic materials have exhibited remarkable potential application in spin switches and storage devices. Therefore, it is imperative to design innovative device architectures and explore their electrical transport characteristics.

In this study, the research team successfully prepared high-quality single crystals of CrI₃ using chemical vapor deposition method and constructed Pt/CrI₃ heterostructures through micro-nanofabrication techniques. Subsequently, they investigated the interaction between magnetic and electronic transport properties within this system.

They found the Pt film exhibited an anomalous Hall effect upon contacted with CrI₃ nanosheets, indicating that Pt film acquires ferromagnetism through magnetic proximity effect. Moreover, the gradual weakening of the anomalous Hall effect with increasing temperature suggests that the magnetization in the Pt layer is primarily attributed to proximity effects. Additionally, as the thickness of the Pt layer increases, a decrease in anomalous Hall resistance further confirms that magnetization in the Pt film is predominantly influenced by interface effects.

Researchers also observed that the increase in applied current resulted in a reduction of coercivity and saturation resistance of the Pt layer. First-principles calculations suggest that a hybridized orbital is formed at the interface of the Pt/CrI₃ heterostructure, leading to significant splitting of Fermi level for Pt and resulting in uneven spin density distribution and generation of magnetic moment.

“These findings demonstrate the precise control of electronic exchange interactions at interfaces, and hold significant implications for designing innovative spintronics devices," said HAN Yuyan.