News Release

A novel package for high power density SIC power modules

Researchers at the Institute of Electrical Engineering, Chinese Academy of Sciences, have developed SiC power modules with stacked DBC packaging, enabling the parallel connection of more chips.

Peer-Reviewed Publication

CES Transactions on Electrical Machines and Systems

Illustration of proposed SiC power module

image: 

The proposed 1200V/1500A all-SiC full-bridge power module based on the proposed DBC-stacked packaging unit.

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Credit: CES Transactions on Electrical Machines and Systems

1. Research content

The stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by 1-fold, SiC power modules allow for more chip parallel connections within the same packaging area, thereby significantly increasing the power density of SiC power modules. The fabrication method of the stacked DBC packaging units also enhances production efficiency.

2. The research results and their significance

Reviewing the shortcomings of the conventional 2D layout power module, this work proposed a packaging method that multiple DBC-staked units for SiC power module. Proposed DBC units and power module are detailed introduced, and multiple connection cases between different DBCs are provided. Experimental and simulation results show that the proposed package module has the following advantages:

The design of multiple DBC-staked units package is innovative, which can Effectively reducing parasitic inductance and have good electrical performance. Current carrying capacity is increased, and under the same current, the proposed module's flat area can be reduced, allowing more chips to be paralleled. Compared with planar packaging, the proposed module has simple process and reduced cost. And units design can also improve productivity.

3. Future outlook

In the near future, to further exploit the advantages of the DBC-staked package, four points should be noted. First, to reduce the parasitic parameters and balance the parallel devices in the gate path, the positions of the gate terminals can be designed in the center layout of the power module. Second, when the current rating is increased, the transfer interconnection should be carefully designed. Third, for power modules operating at >1 000 A, the use of multiple power terminals at the same electrical point should be considered to increase reliability. Finally, because hybrid structures may increase the number of packaging steps, the manufacturing capability and cost should be considered for production.


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