Atomic layer deposition (ALD) machine for deposition of HfZrO2 ferroelectric films (IMAGE)

University of Tokyo

Atomic layer deposition (ALD) machine for deposition of HfZrO2 ferroelectric films

Caption

This machine is used to deposit a thin film of hafnium oxide-based ferroelectric materials to produce ferroelectric gate transistors (FeFETs) used in a new physical reservoir computing architecture devised by University of Tokyo researchers.

Credit

Kasidit Toprasertpong, The University of Tokyo

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