INTT detector (IMAGE)

DOE/Brookhaven National Laboratory

INTT detector

Caption

Technicians, engineers, postdocs, and scientists from Japan, Taiwan, and the U.S. have built the INTT detector, which consists of four barrel layers of silicon strip semiconductor detectors. From left: Maya Shimomura, Robert Pisani, Cheng-Wei Shih, Genki Nukazuka, Seberg Nicholas, Raul Cecato, Ivan Kotov, Salvatore Polizzo, Itaru Nakagawa, and Rachid Nouicer.

Credit

Brookhaven National Laboratory

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