Particle accelerator-assisted proton injection into the substrate. (IMAGE)
Caption
Silicon carbide (SiC) is a promising alternative to silicon for power electronic devices, but has low reliability for undergoing bipolar degradation. Now, researchers from Japan have proposed a method that can suppress bipolar degradation in SiC via proton implantation into the substrate using a particle accelerator.
Credit
Masashi Kato from Nagoya Institute of Technology
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