Proton implantation prevents the expansion of stacking faults and solves the problem of bipolar degradation. (IMAGE)
Caption
Electroluminescence images of PiN diodes made from silicon carbide after being subjected to electrical stress. In the first diode (a), on which proton implantation was not applied, expanded stacking faults show up as dark regions. The other three diodes (b, c, and d) undergo proton implantation at increasing hydrogen ion doses. Contrary to the first diode, these exhibit no stacking fault expansion and, in turn, bipolar degradation.
Credit
Masashi Kato from Nagoya Institute of Technology
Usage Restrictions
Credit must be given to the creator.
License
CC BY