Material characterization and device performance. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Material characterization and device performance.

Caption

(a)Cross-section TEM of the full in-pocket III-V stack. (b) Cross-sectional STEM of the active region showing the existence of the QDs after temperature adjustments. (c) Cross-section of the as-grown material in pockets. (d) Room temperature photoluminescent spectrum of the as-grown material. (e) Room-temperature LIV of the device with the highest output power. Insets shows the probe needles on a cleaved laser bar. (d) Aging results for the in-pocket laser at 35 °C. the extrapolated lifetime is comparable to those grown on native substrate with similar defect level.

Credit

by Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Andrew Clark, Mukul Debnath, Rosalyn Koscica, Gerald Leak, Joshua Herman, David Harame, Peter Ludewig, Yating Wan, and John E. Bowers

Usage Restrictions

Credit must be given to the creator.

License

CC BY

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.