Schematic of the reaction and structural characterizations of PtTe2Ge1/3 (IMAGE)
Caption
(a) Schematic of the phase transition dominated by HSAB principle (b) High-angle annular dark-field scanning transmission electron microscopy (STEM) cross-sectional image of the reacted t = 14 nm sample. (c) Atomic-resolution energy dispersive spectrometer (EDS) mapping of Pt and Te elements. (d) Raman spectrum of the obtained sample. The inset shows the lattice structure of PtTe2. (e) EDS mapping of the Ge element. (f) Electron energy loss spectroscopy (EELS) spectra of vdW PtTe2Ge1/3 (blue square) and the substituted Cr on the surface (red square). The double peaks around 584 eV, single peaks around 532 eV and 615 eV are features of Cr, O and Te, respectively. Inset shows the low-resolution image. Scale bar: 2 nm. The top bright layer in the image is the protective layer (platinum) for the preparation of STEM samples.
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