Figure 3 (IMAGE)

Tohoku University

Figure 3

Caption

(Left) A schematic illustration of tunnel magnetoresistance (TMR) multilayer using antiferromagnetic-like (full compensated ferrimagnetic) half-metal (left) and conventional TMR multilayer (right). In the latter, several layers, including a ferromagnetic layer and an antiferromagnetic layer, pin the direction of the magnetic moment of the ferromagnetic layer. By replacing these several layers with one layer of antiferromagnetic-like half-metal, high characteristics and low leakage magnetic field are realized, and enable high density.

Credit

Rie Umetsu

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