Schematic of vapor-phase infiltration of inorganic elements into organic photoresist for extreme-ultraviolet lithography (IMAGE)

DOE/Brookhaven National Laboratory

Schematic of vapor-phase infiltration of inorganic elements into organic photoresist for extreme-ultraviolet lithography

Caption

Nam's technology is based on infusing inorganic elements (purple molecules) by vapor into an organic extreme-ultraviolet (EUV) photoresist (green) on a substrate such as silicon (Si). The resulting organic-inorganic hybrid EUV photoresist (blue, middle) can be exposed to EUV light (yellow cone) to pattern next-generation semiconductor devices with reduced dimensions (right).

Credit

Chang-Yong Nam

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