Bench-mark electronic quality of multilayer MoS2 field-effect transistors (IMAGE)
Caption
(a) Schematic view (top) of back-gated MoS2 field-effect transistors, and cross-section STEM image (bottom) of a trilayer field-effect transistors at the MoS2-Au contact region. Scale bar: 1 nm. (b and c) Typical output/transfer curves of a trilayer MoS2 field-effect transistors with channel length of 40 nm and HfO2 dielectric layer thickness of 5 nm. Inset to (b) shows the SEM image of the channel. (d) Comparison of transfer curves of mono-, bi- and trilayer MoS2 FETs with channel length of 100 nm. (e) The comparisons of current densities (@Vds=1 V) and on/off ratios with previous works. (f) Transfer curves of 150 trilayer MoS2 field-effect transistors at Vds=1 V. Inset to (f) shows photograph of wafer-scale MoS2 FET array. (g) Statistical distribution of on/off ratio (red), threshold voltage (green) and subthreshold swing (blue) from the 150 trilayer MoS2 FETs. (h) The sheet resistance ρ and contact resistance Rc extracted from mono-, bi-, and trilayer MoS2 field-effect transistors. (i) Statistical distribution of device mobility of mono-, bi- and trilayer MoS2 field-effect transistors. The yellow stars indicate the maximum values achieved in each type of devices.
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