Morphology models and simulation results (IMAGE)
Caption
(a) The conventional OPV structure in this simulation work composing of the following multilayer structure: Indium thin oxide (ITO)/ Active layer/ Metal cathode. (b) Three different active layer morphological pictures, namely uniform mixing, binary phase separation, and multi-length-scale. Numerical simulation results of the devices performance metrics. (c) short-circuit current density (JSC, mA•cm-2), (d) fill factor (FF). (e) open-circuit voltage (VOC, V), and (f) power conversion efficiency (PCE, %), with interdigital and multi-scaled morphology by changing period width.
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