Figure 2 | Performance of the detectors. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2 | Performance of the detectors.

Caption

Rv (a), NEP (b) and D* (c) of the devices in a frequency range of 0.032-0.330 THz under a voltage bias of 1000 mV. The dash lines in (a) and (b) represent typical performance of state-of-the-art commercial zero bias SBDs (ZBDs) from VDI for corresponding frequency band. The dash lines in (c) represent the ideal D* of thermal-type detector at room temperature, Golay cell and a Si bolometer at 4.2 K. d Rv, NEP and D* of the devices at different temperature under a voltage bias of 1000 mV at 0.171 THz. e Amplitude-frequency response of the devices at 293 K and 200 K.

Credit

Jinchao Tong, Fei Suo, Tianning Zhang, Zhiming Huang, Junhao Chu and Dao Hua Zhang

Usage Restrictions

None

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.