Figure 1 | Device design and field distribution. (IMAGE)
Caption
a Structure of the epitaxially grown InSb on GaAs substrate. b Schematic of the spiral antenna assisted device. R and r are respectively the out and inner radius of the antenna. β1 and β2 represent curves of the arm. c The central ohmic metal-semiconductor-metal (OMSM structure). s (50 μm) and w (30 μm) are the length and width of the mesa between ohmic contacts. E denotes the TM polarization orientation (to arouse SPPs in nanogroove array) of incident electromagnetic waves. d Nanogroove array. The period p, width d, and depth t of the nanogroove are 700 nm, 350 nm, and 250 nm, respectively. e Distribution of simulated optical field for nanogroove InSb device at 0.171 THz. f Distribution of the field at xy plane (z=250 nm, bottom plane of the nanogroove array). g Distribution of the field at xz (y=0) plane. Optical field distribution along cut-line I (h) and cut-line II (i) as denoted in (f) and (g), respectively. j Scanning electron microscopy image of the plasmonic nanogroove InSb device. The bottom panel is the zoom-in view of the nanogroove array area.
Credit
by Jinchao Tong, Fei Suo, Tianning Zhang, Zhiming Huang, Junhao Chu and Dao Hua Zhang
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