Figure 1: Comparison of Reduction Process (IMAGE)

Osaka University

Figure 1: Comparison of Reduction Process

Caption

Comparison of reduction process for graphene oxide with (a) conventional and (b) our methods. Schematic drawings of flowing carriers (electrons and holes) in (c) low crystalline and (d) highly crystalline graphene. Temperature dependence of the conductance in the reduced graphene oxide films prepared by thermal treatment at (e) 900 C and (f) 1130 C. From the analysis of the temperature dependence of the conductance, the carrier transport mechanism of the reduced graphene oxide films prepared by high temperature treatment in ethanol vapor at 1130 C show the band-like transport in range from 300 to 40 K for measurement temperature (see Fig. 1(f)).

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Osaka University

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