Modulating the Optical and Electrical Properties of MPB SCBK via Voltage Regulation Engineering and Application in Memristors (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Modulating the Optical and Electrical Properties of MPB SCBK via Voltage Regulation Engineering and Application in Memristors

Caption

a, Schematic of the experimental device. The two probes are in contact with the gold electrode to provide a bias voltage, and the laser excites the MPB SCBK to detect dynamic PL and steady-state PL. b, The variation in surface recombination velocity and surface defect density in MPB SCBK at different regions. c, The variation of PL average lifetime in MPB SCBK at different regions with different applied voltage. d, Fluorescence confocal micrograph of the area between the electrodes and the centre region with different applied biases and upon removing the bias. e, J-V hysteresis loops of the Au/MPB SCBK/Au device. The voltage sweep sequence is 0 V ? 25 V ? 0 V ? -25 V ? 0 V.

Credit

by Jun Xing, Chen Zhao, Yuting Zou, Wenchi Kong, Zhi Yu, Yuwei Shan, Qingfeng Dong, Ding Zhou, Weili Yu and Chunlei Guo

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