Cross-Sectional View Of The Atlas-Tfet And Fabricated Device (IMAGE)

University of California - Santa Barbara

Cross-Sectional View Of The Atlas-Tfet And Fabricated Device

Caption

Top: A schematic cross-sectional view of the ATLAS-TFET showing the Ge source/substrate, MoS2 channel, and the band-to-band (BTBT) tunneling direction. Lower: A schematic view of the fabricated device showing Ge source/substrate along with a native GeOx layer, the MoS2 channel with a gate dielectric on top. Note that sections of the source and drain electrodes as well as the Ge substrate around the MoS2 are fully covered by a dielectric (SiO2) to prevent them from influencing the gate electrode.

Credit

Jiahao Kang, UCSB

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