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Science China Press

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(a) Typical STM image of Sn2Bi with two defects: A1 and A2. (b) Differential conductance maps of A1 and A2 taken at -0.75 V. (c) Top view (up) and side view (bottom) of the Bi vacancy ball-and-stick mode. (d-e) Color-coded dI/dV line mapping over two identical defects A1 and A2 in (a). Vertical dotted lines indicate the center positions of A1 and A2. The dash-dotted lines represent the theoretical fitting of the position-dependent tip-induced band bending (TIBB) at each charging peak. The TIBB energies are also marked. (f) TIBB-derived charging energies of A1 and A2 for four charging peaks vary with charge number N (1-4).

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