Electrically controlled memory operations in the Heterostructure (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Electrically controlled memory operations in the Heterostructure

Caption

a, Time-dependent IX emission characteristics upon cyclic Vg among −60 V, 0 V, 60 V and 0 V. The detecting polarization shifts every three cycles of Vg. b, Retention time of the “1” and “0” excitonic states. Surprisingly, the 1 and 0 excitonic states can persist for at least 60 minutes, holding great promise for nonvolatile valley-addressable memories.

Credit

by Tong Ye, Yongzhuo Li, Junze Li, Hongzhi Shen, Junwen Ren, Cun-Zheng Ning, Dehui Li

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Credit must be given to the creator.

License

CC BY

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