Nanofabrication of Artificial Graphene in a Semiconductor 2 (IMAGE)

Columbia University School of Engineering and Applied Science

Nanofabrication of Artificial Graphene in a Semiconductor 2

Caption

The green layer represents the 2-D sheet where the electrons can move. Nanolithography and etching form small pillars beneath which lie the quantum dots arranged in an hexagonal lattice. Scanning electron micrographs at the bottom show the hexagonal array, with a period of only 50 nanometers, from the top and at an angle.

Credit

Diego Scarabelli/Columbia Engineering

Usage Restrictions

Please use the credit line: Diego Scarabelli/Columbia Engineering

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.