SEM of Lasing/Anti-Lasing Device (IMAGE)

DOE/Lawrence Berkeley National Laboratory

SEM of Lasing/Anti-Lasing Device

Caption

Scanning electron microscope image of the single device capable of lasing and anti-lasing. Indium gallium arsenide phosphide (InGaAsP) material functions as the gain medium, while the chromium (Cr) and germanium (Ge) structures introduce the right amount of loss to satisfy the condition of parity-time symmetry that is required for lasing and anti-lasing.

Credit

Zi Jing Wong/UC Berkeley

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