Figure 1 (IMAGE)

Pohang University of Science & Technology (POSTECH)

Figure 1

Caption

Structure and performance analysis of inorganic CsSnI3-based perovskite thin-film transistors used in the study. (a) Bottom-gate/top-contact thin-film transistors (b) Hole mobility and current ratio according to CsI/SnI2 molar ratios (c) Hole mobility and current according to Pb substitution ratios in CsI-rich (x=1.25) ratio (d) Thin-film transistor performance with CsI-rich (x=1.25) ratio and 10% Pb substitution ratio (e) Output curve (f) Performance of 100 transistors on 10 different samples fabricated with the optimized ratio.

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POSTECH

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