InAs XOIs (IMAGE) DOE/Lawrence Berkeley National Laboratory Caption Fabricating an indium oxide (InAs) device starts with a) epitaxially growing and etching InAs into nanoribbon arrays that are get stamped onto a silicon/silica (Si/SiO2 ) substrate; b) and c) InAs nanoribbon arrays on Si/SiO2; d) and e) InAs nanoribbon superstructures on Si/SiO2. Credit courtesy of Ali Javey, UC Berkeley Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.