Figure 1 (IMAGE)

Moscow Institute of Physics and Technology

Figure 1

Caption

The left image shows a synapse from a biological brain, the inspiration behind its artificial analogue (right). The latter is a memristor device implemented as a ferroelectric tunnel junction -- that is, a thin hafnium oxide film (pink) interlaid between a titanium nitride electrode (blue cable) and a silicon substrate (marine blue), which doubles up as the second electrode. Electric pulses switch the memristor between its high and low resistance states by changing hafnium oxide polarization, and therefore its conductivity.

Credit

Elena Khavina/MIPT Press Office

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