Magnetic memory states go exponential (IMAGE)

Bar-Ilan University

Magnetic memory states go exponential

Caption

Researchers from Bar-Ilan University have shown that relatively simple magnetic thin film structures of N crossing ellipses can support two to the power of 2N magnetic states - much greater than previously thought - and demonstrated switching between the states with spin currents. The ability to stabilize and control exponential number of discrete magnetic states in a relatively simple structure constitutes a major contribution to spintronics and may pave the way to multi-level magnetic memory with extremely large number of states per cell, be used for neuromorphic computing, and more. The image shows examples of simulated magnetic states supported by the structures.

Credit

Shubhankar Das, Ariel Zaig, Moty Schultz, Lior Klein

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