Implementing Schottky Junction between Electrode and Organic Semiconductor by Sulfur Atomic Doping (IMAGE)

DGIST (Daegu Gyeongbuk Institute of Science and Technology)

Implementing Schottky Junction between Electrode and Organic Semiconductor by Sulfur Atomic Doping

Caption

Scheme of Schottky contact between electrodes and semiconducting polymer. Upper panel is for the case of pristine ZnO and lower panel is for the case of S-doped ZnO. Estimated depletion width and built-in potential of each sample are denoted in the figure.

Credit

Daegu Gyeongbuk Institute of Science and Technology (DGIST)

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