Thick Bulk Gallium Nitride Crystal Wafer (IMAGE) American Institute of Physics Caption This image shows a thick bulk gallium nitride (GaN) crystal wafer (2 inches in diameter) with a GaN film in the foreground fabricated by controlled spalling (its film thickness is ~20 microns or 1/5th the thickness of a sheet of paper. Credit Bedell/IBM Research Usage Restrictions This image may be used only with appropriate credit. License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.