Schematic illustration of the device proposed in this study (IMAGE)
Caption
Schematic of the proposed device structure for neuromorphic spintronic memristors. The write path is between the terminals through the top layer (black dotted line), the read path goes through the device stack (red dotted line). The right side of the figure indicates how the choice of substrate dictates whether the device will show deterministic or probabilistic behaviour.
Credit
Banerjee group, University of Groningen
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