200 mm Diameter 650V, E-mode Gallium Nitride (GaN) (IMAGE)

Naval Research Laboratory

200 mm Diameter 650V, E-mode Gallium Nitride (GaN)

Caption

A 200 mm diameter monolithically integrated 650V, E-mode gallium nitride (GaN) half-bridge IC power device wafer (wafer-level integrated low- and high-side transistors, drivers, logic, and sensors) on a QST® (QROMIS Substrate Technology) substrate. The large GaN engineered substrate wafer diameter enables more viable GaN devices to be made per wafer, therefore leading to their manufacture at a lower cost.

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(Courtesy photo by QROMIS)

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