E-mode Gallium Nitride (GaN) (IMAGE)

Naval Research Laboratory

E-mode Gallium Nitride (GaN)

Caption

Cem Basceri, QROMIS president and CEO, displays a 200 mm diameter 650V, E-mode gallium nitride (GaN) discrete power device wafer on a QST® (QROMIS Substrate Technology) substrate.

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(Courtesy photo by QROMIS)

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