Figure 2 | Device simulation results of MAPbI3 PSCs. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2 | Device simulation results of MAPbI3 PSCs.

Caption

a,b The hole current density distribution in the simulated PSCs without (a) and with (b) BP modification. c The simulated J-V curves of the PSCs modified with different 2-D materials. d The relative PCE enhancement of the PSCs after the modifications with different 2-D materials.

Credit

by Peng You, Guanqi Tang, Jiupeng Cao, Dong Shen, Tsz-Wai Ng, Zafer Hawash, Naixiang Wang, Chun-Ki Liu, Wei Lu, Qidong Tai, Yabing Qi, Chun-Sing Lee, Feng Yan

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