Fig. 2 (IMAGE)

Osaka University

Fig. 2

Caption

(a) Electron trap density and (b) luminescence intensity of color centers at SiO2/SiC interface as functions of oxidation conditions.

Credit

2025 Onishi et al., Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces. APL Materials

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CC BY

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