Figure 1. Growth of 1D mirror twin boundary metal and 2D integrated circuit based on the process (IMAGE)
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This figure depicts the synthesis of metallic 1D mirror twin boundaries through Van der Waals epitaxial growth (top) and the large-area 2D semiconductor integrated circuit constructed based on these boundaries (bottom). By controlling the crystal structure of molybdenum disulfide at the atomic level using Van der Waals epitaxial growth, metallic 1D mirror twin boundaries were freely synthesized in desired locations on a large scale. These boundaries were applied as gate electrodes to implement ultra-miniaturized 2D semiconductor transistors with channel lengths at the atomic scale.
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Institute for Basic Science
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