Gallium nitride sensor (IMAGE) DOE/Oak Ridge National Laboratory Caption A wire-bonded die consisting of over 20 gallium nitride high-electron mobility transistors, seen here under a microscope, could be used in nuclear sensing equipment because of its high resistance to radiation. Credit Kyle Reed/ORNL, U.S. Dept. of Energy Usage Restrictions N/A License Original content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.