Figure | principle of the multi-junction cascaded vertical-cavity surface-emitting laser (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure | principle of the multi-junction cascaded vertical-cavity surface-emitting laser

Caption

a, Structural schematic diagram, including N-type Distributed Bragg Reflector (N-DBR), P-type Distributed Bragg Reflector (P-DBR), Multiple Quantum Wells (MQW), oxidation layer, and Tunnel Junction (TJ). b, Refractive index distribution and standing wave light field distribution of a 3-junction VCSEL under bias. c, Active region band structure. The mechanism of multiple electron transitions is achieved through cascading multiple active regions via tunnel junctions. d, Band structure of the tunnel junction under bias.

Credit

by Yao Xiao, Jun Wang, Heng Liu, Pei Miao, Yudan Gou, Zhicheng Zhang, Guoliang Deng and Shouhuan Zhou

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Credit must be given to the creator.

License

CC BY

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