Figure 1 (d) (IMAGE) Hong Kong University of Science and Technology Caption Figure 1 (d) Good cyclic performance of the antiferromagnetic Mn5Si3 device. Credit HKUST Usage Restrictions No License Original content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.